Phase change memory and phase change recording medium

ABSTRACT

A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.

BACKGROUND OF THE INVENTION

The present invention relates to a phase change memory or a phase changerecording medium, which is capable of recording/reproducing informationby utilizing phase change.

In phase change recording method, recording is performed by unitizing afact that material for a recording film undergoes phase change betweencrystal phase and amorphous phase and reading is performed by judgingwhether the recording film material is in the crystal phase or theamorphous phase, as disclosed in Applied Physics Vol. 71, No. 5 (2002)pp. 562-565, for example.

A chalcogenide, e.g. GeSb_(x)Te_(y), is representative recording filmmaterial in such phase change recording method, but its amorphous phaseis unstable and sometimes crystallized with the lapse of time. Thistrouble becomes worse under circumstances of high temperature. Further,there is a problem that properties of the recording film material aredegraded by repetition of rewriting in a case where volume change in thephase change between crystal phase and amorphous phase is large. It isdesired to restrain such degradation to improve the reliability of thephase change memory.

BRIEF SUMMARY OF THE INVENTION

A first object of the present invention is to provide a phase changememory and a recording medium with high reliability.

A second object of the present invention is to provide a phase changememory and a recording medium, which preserves its excellent performanceeven after repetition of writing and reading.

The inventors have researched and examined various means for stabilizingamorphous phase of a phase change recording film, and discovered thatstabilization of the amorphous phase is achieved by bring anotheramorphous material, which has an atomic arrangement similar to theamorphous phase of the phase change recording film, into contact withthe phase change recording film.

Further, with respect to the above teaching in “Applied Physics”, theinventors have found that if a composition with high density of latticeimperfection is employed to improve repetition tolerance, regularity ofan atomic arrangement in the crystalline state (i.e. erased condition)becomes inferior as an adverse effect due to increase of latticeimperfection and distinction from the amorphous phase becomes difficult.In this regard, the inventors have searched for other means effectivefor improvement of repetition tolerance, instead of employment of thecomposition with high density of lattice imperfection, and found that itis effective to impart tensile strain to the recording film.

It is possible to provide a phase change memory or a phase changerecording medium which contributes to solve any of the above-describedproblems on the basis of the above-described discoveries.

Concretely, for example, it is possible to provide a phase change memoryor recording medium with high reliability.

Alternatively, further, it is possible to provide a phase change memoryand a phase change recording medium with high rewriting repetitiontolerance.

Subject matter of the present invention is solved by a phase changememory or a phase change recording medium having the followingstructure.

According to one aspect of the present invention, there is provided aphase change memory comprising: a substrate; an insulation film formedon a main surface of the substrate; a first electrode deposited on theinsulation film; a phase change recording film deposited on the firstelectrode; and a second electrode deposited on the phase changerecording film, wherein the phase change recording film contains atleast two of Ge, Sb and Te as main constituting elements thereof, andthe first electrode comprises material of group of Ti, Si and N, orgroup of Ta, Si and N as main constituting material thereof.

Concentration of Si in the first electrode film is preferably between0.07-33 at. %.

The first electrode film comprises TiSi_(x)N_(y) or TaSi_(x)N_(y) formedby chemical vapor deposition or plating.

The second electrode is a film formed by at least one of oxidizing,nitriding and oxynitriding.

The phase change recording film contains Zn as a constituting element.

Difference in an average distance between nearest neighbor atoms betweenthe phase change recording film and the first electrode is within 3% ofthe average distance between nearest neighbor atoms of the phase changerecording film.

The first electrode comprises a first electrode layer and a secondelectrode layer located between the first electrode layer and the phasechange recording film, and the second electrode layer has an averagedistance between nearest neighbor atoms more closer to an averagedistance between nearest neighbor atoms of main constituting material ofthe phase change recording film than an average distance between nearestneighbor atoms of the first electrode layer.

According to a second aspect of the present invention, there is provideda phase change memory comprising: a substrate; a first layer, in whichan insulation layer and a first electrode communicated with a firstwiring are formed, formed on a main surface side of the substrate; asecond layer in which a phase change recording film is deposited on theinsulation layer and the first electrode film; and a third layer, inwhich a second electrode communicated with a second wiring is formed,deposited on the phase change recording film, wherein the phase changerecording film contains at least two of Ge, Sb and Te as constitutingelements thereof, and the first electrode contains group of Ti, Si and Nor group of Ta, Si and N as a main constituting material thereof, andthe insulation film contains TiO_(x)N_(y), TaO_(x)N_(y),TiSi_(x)O_(y)N_(z) or TaSi_(x)O_(y)N_(z) as a main constituting materialthereof.

The insulation film comprises a first insulation layer and a secondinsulation layer located between the first insulation layer and thephase change recording film, and the insulation layer has an averagedistance between nearest neighbor atoms more closer to an averagedistance between nearest neighbor atoms of main constituting material ofthe phase change recording film than an average distance between nearestneighbor atoms of the first insulation layer.

According to a third aspect of the present invention, there is provideda phase change memory comprising: a substrate; an insulation film formedon a main surface of the substrate; a first electrode deposited on theinsulation film; a phase change recording film deposited on the firstelectrode; and a second electrode deposited on the phase changerecording film, wherein the phase change recording film contains atleast two constituting elements selected from Ge, Sb and Te, and thephase change recording film is in tesile strain state.

According to a fourth aspect of the present invention, there is provideda phase change recording medium comprising: a substrate; a firstdielectric film formed on a main surface of the substrate; a recordingfilm deposited on the first dielectric film; and a second dielectricfilm deposited on the recording film, wherein the recording filmcontains at least one of GeSb₂Te₄, Ge₂Sb₂Te₅ and Ge₆Sb₂Te₉ as mainconstituting material thereof, and the first dielectric film containsTiO_(x)N_(y), TaO_(x)N_(y), TiSi_(x)O_(y)N_(z), TaSi_(x)O_(y)N_(z),TiSi_(x)O_(y)N_(z) or TaSi_(x)O_(y)N_(z) as main constituting materialthereof.

The term “a main constituting material” used in the present text means amaterial included with highest concentration. An accurate compositionratio of GeSb₂Te₄ for instance is Ge:Sb:Te=1:2:4, but GeSb₂Te₄ of whichcomposition ratio deviated within a range of 10% or less such asGe:Sb:Te=1:2.2:4 is deemed to be substantially the same and is included.

Other objects, features and advantages of the invention will becomeapparent from the following description of the embodiments of theinvention taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a sectional view of a main part of a phase change memory of afirst embodiment of the present invention.

FIG. 2 is a graph showing dependency of an activation energy totransform from an amorphous phase to a crystal phase upon a lowerelectrode material when GeSb₂Te₄ is used as a recording film.

FIG. 3 is a graph showing dependency of an activation energy totransform from an amorphous phase to a crystal phase upon a lowerelectrode material when Ge₂Sb₂Te₅ is used as a recording film.

FIG. 4 is a graph showing dependency of an activation energy totransform from an amorphous phase to a crystal phase upon a lowerelectrode material when ZnGeTe is used as a recording film.

FIG. 5 is a graph showing dependency of an activation energy totransform from an amorphous phase to a crystal phase upon thinconcentration region of Si contained in TiN when Ge₂Sb₂Te₅ is used as arecording film and TiN is used as a lower electrode.

FIG. 6 is a graph showing dependency of an activation energy totransform from an amorphous phase to a crystal phase upon thickconcentration region of Si contained in TiN when Ge₂Sb₂Te₅ is used as arecording film and TiN is used as a lower electrode.

FIG. 7 is a graph showing dependency of an activation energy totransform from an amorphous phase to a crystal phase upon thinconcentration region of Si contained in TaN when Ge₂Sb₂Te₅ is used as arecording film and TaN is used as a lower electrode.

FIG. 8 is a graph showing dependency of an activation energy totransform from an amorphous phase to a crystal phase upon thickconcentration region of Si contained in TaN when Ge₂Sb₂Te₅ is used as arecording film and TaN is used as a lower electrode.

FIG. 9 is a sectional view of a main part of a phase change memory of asecond embodiment of the present invention.

FIG. 10 is a sectional view of a main part of a phase change memory of athird embodiment of the present invention.

FIG. 11 is a sectional view of a main part of a phase change recordingmedium of a fourth embodiment of the present invention.

FIG. 12 is a sectional view of a min part of a phase change memory usinga transistor for selection of a certain memory cell.

FIG. 13 is a view showing a circuit structure of a phase change memoryusing transistors for selection of a certain memory cell.

FIG. 14 is a view showing a circuit structure of a phase change memoryusing diodes for selection of a certain memory cell.

FIG. 15 is a sectional view showing a main part of another phase changememory using a diode for selection of a memory cell.

FIG. 16 is a block diagram of a SRAM memory chip equipped with a defectrescue circuit.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will be described in detail with reference toaccompanied drawings. The present invention is not limited to thefollowing embodiments and includes some variations or modifications onthe basis of well known arts.

FIG. 1 shows a sectional structure of a main part of a phase changememory according to a first embodiment of the present invention. Ageneral outline of a phase change memory is described in Applied PhysicsVol. 71, No. 12 (2002), pp. 1513-1217. A phase change memory of theembodiment of the present invention is fabricated by successivelyoverlaying a wiring film 102 a, a lower electrode film 102, aninsulation film 103, a phase change recording film 104, an upperelectrode film 105, a wiring film 106, an insulation film 107, a wiringfilm 108 and then an insulation film 109 on a silicon substrate 101, forexample. Each films may be formed by sputtering, CVD, plating or else.

The phase change recording film 104 preferably contains at least twoconstituting elements selected from Ge, Sb and Te. It is preferable tocontain Te. For example, GeSb₂Te₄, Ge₂Sb₂Te₅, Ge₆Sb₂Te₉, ZnSb_(x)Te_(y),ZnGe_(x)Te_(y), ZnGe_(x)Sb_(y)Te_(z) or GeSb_(x)Te_(y) may be a mainconstituting material. GeSb₂Te₄, Ge₂Sb₂Te₅ and Ge₆Sb₂Te₉ have anadvantage that their phase changing speeds are high, whileZnSb_(x)Te_(y), ZnGe_(x)Te_(y), ZnGe_(x)Sb_(y)Te_(z) and GeSb_(x)Te_(y)have an advantage that they have high mechanical strength.

As a material for the lower electrode film 102, it is preferable to useamorphous material, which has an atomic arrangement similar to anamorphous phase of the phase change recording film 104 in order tostabilize the amorphous phase of the phase change recording film 104.TiSi_(x)N_(y) and TaSi_(x)N_(y) may be exemplified as the amorphousmaterial, which has the atomic arrangement similar to an amorphous phaseof the phase change recording film 104.

TiSi_(x)N_(y) and TaSi_(x)N_(y) are amorphous material with an averagedistance of 0.3 nm or so between nearest neighbor atoms at a contactinterface. Since the main constituent, e.g. GeSb₂Te₄, Ge₂Sb₂Te₅,Ge₆Sb₂Te₉, ZnSb_(x)Te_(y), ZnGe_(x)Te_(y), ZnGe_(x)Sb_(y)Te_(z) orGeSb_(x)Te_(y), of the phase change recording film 104 has an averagedistance of 0.3 nm or so between nearest neighbor atoms in an amorphousstate, the amorphous phase of the phase change recording film 104 isstabilized when TiSi_(x)N_(y) or TaSi_(x)N_(y) is in contact with thephase change recording film 104. The average distance between nearestneighbor atoms at the contact interface is made to be an averagedistance between nearest neighbor atoms in a crystal face parallel tothe contact interface. The average distance between nearest neighboratoms in embodiments hereinafter is a value in the crystal face.

It is preferable that difference between the average distance betweennearest neighbor atoms of the main constituting material in therecording film 104 and the average distance between nearest neighboratoms in the lower electrode film 102, which is in contact with therecording film 104, is smaller. It is substantially preferable that thedifference is a value of degree in which interface defect does notoccur, that is, the difference is within 3% of the average distancebetween nearest neighbor atoms in the recording medium. Further, in viewof improving stability of components, for example, in view ofrestraining diffusion, it is preferable to limit the difference within1.5% of the average distance. The distance between nearest neighboratoms in the recording film is preferably measured in an amorphous statebut may be measured in a crystalline state accounting easiness ofmeasurement.

Strain can be measured from difference between diffraction peaks inX-ray diffraction, for example. In order to obtain sharper diffractionpeaks, fine illuminating radiation such as synchrotron orbit radiationmay be used.

In order to show this effect, the inventors have analyzed an activationenergy necessary for transformation of the phase change recording film104 from an amorphous phase to a crystal phase by molecular dynamicssimulation. The molecular dynamics simulation is method in which aforce, which is applied to each atom, is calculated through aninteratomic potential, and Newton's equation of motion is solved inresponse to the calculated force so as to identify a position of eachatom at a certain time, as disclosed in Journal of Applied Physics Vol.54 (1983) p. 4877. In the present embodiment, charge-transfer wasincorporated as a factor in the above molecular dynamics simulation tocalculate interactions between different elements, and thebelow-mentioned relationship could be obtained.

The process to analyze an activation energy necessary for transformationof a recording film 104 from an amorphous phase to a crystal phase by amolecular dynamics is as follows.

The recording film 104 is initially held in an amorphous state. Acrystallization time until the amorphous recording film 104 istransformed to a crystal phase is measured at 600° C. and 700° C. Themeasurement results are illustrated as Arrhenius spots according to aconventional process. A straight line is drawn in the manner that itpasses the two spots, which represent measurement results at the twodifferent temperatures. An activation energy is calculated from aninclination of the straight line.

FIG. 2 shows dependency of an activation energy upon a main constitutingmaterial of a lower electrode film 102 when GeSb₂Te₄ is used as a mainconstituting material of the phase change recording film 104. It isfound from results in FIG. 2 that an activation energy is remarkablylarge when a lower electrode film comprises TiSi_(x)N_(y) orTaSi_(x)N_(y) which is an amorphous material with an average distance of0.3 nm or so between nearest neighbor atoms in a contact interface, andan amorphous phase of the phase change recording film 104 is stabilized.In this embodiment, TiSi_(x)N_(y) is prepared by adding 1 at. % Si toTiN, while TaSi_(x)N_(y) is prepared by adding 1 at. % Si to TaN.

FIG. 3 shows dependency of an activation energy upon a main constitutingmaterial of a lower electrode film 102 when Ge₂Sb₂Te₅ is used as a mainconstituting material of the phase change recording film 104. Similar tothe case of FIG. 2, it is found from results in FIG. 3 that anactivation energy is remarkably large when a lower electrode filmcomprises TiSi_(x)N_(y) or TaSi_(x)N_(y) which is an amorphous materialwith an average distance of 0.3 nm or so between nearest neighbor atomsin a contact interface, and an amorphous phase of the phase changerecording film 104 is stabilized.

When the recording film includes at least two elements selected from thegroup of Ge, Sb and Te and one element selected from the group of Ge, Sband Te as a main constituting element, the same results can be obtainedas in FIGS. 2 and 3 although the results are not shown.

FIG. 4 shows dependency of an activation energy upon a main constitutingelement of a lower electrode film 102 when ZnGeTe is used as a mainconstituting element of a recording film 104. Similar to the cases ofFIGS. 2 and 3, it is found from results in FIG. 4 that an activationenergy is remarkably large when a lower electrode film comprisesTiSi_(x)N_(y) or TaSi_(x)N_(y) which is an amorphous material with anaverage distance of 0.3 nm or so between nearest neighbor atoms in acontact interface, and an amorphous phase of the phase change recordingfilm 104 is stabilized. The effect on stabilization is superior to thosein FIGS. 2 and 3.

In the light of these features, when the recording film includes atleast two elements selected from the group of Ge, Sb and Te and oneelement selected from the group of Ge, Sb and Te as a main constitutingelement, combination including at least Te is preferable. Further, whenthe recording film further includes Zn as a constituting element, anamorphous phase is more stabilized.

In the embodiments described above, effects that an amorphous phase of aphase change recording film 104 is stabilized are shown by usingmaterial prepared by adding 1 at. % Si to TiN as TiSi_(x)N_(y) and byusing material prepared by adding 1 at. % Si to TaN as TaSi_(x)N_(y).

FIGS. 5 to 8 shows dependency of the above described effects upon Siconcentration. From FIGS. 5 to 8, it is found that an activation energyis large and effect to stabilize an amorphous phase of the phase changerecording film 104 is high when Si concentration is within a range of0.07-33 at. %. Accordingly, it is preferable that Si concentration iswithin the above-described range. The reason of this is as follows.There is effect that addition of Si at a ratio of 0.07 at. % or more isapt to transform TiN and TaN into an amorphous phase and thereforeensures stabilization of an amorphous phase of a recording film 104.However, excess Si above 33 at. % significantly decreases an averagedistance less than 0.3 nm between nearest neighbor atoms at a contactinterface, so that the effect to stabilize the amorphous phase of therecording film 104 becomes weak.

FIGS. 5 to 8 show cases in which Ge₂Sb₂Te₅ is used as the phase changerecording film 104, but the same effects of addition amount of Si arealso realized on other recording film materials regardless of magnitudeof an activation energy.

In the case where width of the lower electrode film 102 is narrower thanthat of the phase change recording film 104 as shown in FIG. 1, thelower electrode film 102 is necessarily formed with a narrow width andit is preferable to form the lower electrode film 102 by CVD or platingon fabrication of a precise electrode film. Further, when width of thelower electrode film 102 is narrower than that of the phase changerecording film 104, the insulation film 103 is in contact with therecording film 104 and the lower electrode film 102, and therefore, itis effective that the insulation film 103 is amorphous material with anaverage distance of 0.3 nm or so between nearest neighbor atoms at acontact interface in order to stabilize an amorphous phase of therecording film 104. A difference in the average distance between theinsulation film 103 and the recording film 104 is preferably controlledto a value within 3% of the average distance of the insulation film,since when an amorphous material with an average distance of 0.3 nm orso between nearest neighbor atoms in a contact interface is used as thelower electrode film 102, the amorphous phase of the phase changerecording medium 104 is stabilized as is already described withreference to FIGS. 2 to 4. Amorphous material with an average distanceof 0.3 nm or so between nearest neighbor atoms suitable for formation ofthe insulation film 103 is TiO_(x)N_(y), TaO_(x)N_(y),TiSi_(x)O_(y)N_(z) and TaSi_(x)O_(y)N_(z), for example.

It is advantageous to impart tensile strain to the phase changerecording film 104 in order to improve rewriting tolerance of the phasechange recording film 104, since a stress can be relaxed by the tensilestrain during transformation of the recording film 104 from a crystalphase to an amorphous phase. In order to impart the tensile strain tothe phase change recording film 104, the upper electrode film 105 ispreferably film that is formed by at least one of oxidizing, nitridingand oxynitriding. Particularly, in a case of oxidizing, it is preferableto use RuO₂ film or IrO₂ film, which is an oxide film and conductive, asthe upper electrode film 105. In a case of nitriding, it is preferableto use TiN film or WN film which is a nitride film and conductive, asthe upper electrode film 105. The effect of this embodiment can beobserved even if calculation conditions are changed.

A tensile strain is calculated from a deviation of a diffraction peak inX-ray analysis for instance. Fine radiation, e.g. synchrotron radiation,may be employed for producing a sharp diffraction peak.

FIG. 9 schematically illustrates a sectional structure of a main part ina phase change memory of a second embodiment of the present invention.The second embodiment is basically the same as that in the firstembodiment. The difference between the first and second embodiments isthat the lower electrode film 102 comprises sub-layers 102 b and 102 coverlaid together along a vertical direction.

In this phase change memory, a first lower electrode film 102 b ispreferably made of material well-adherent to the wiring film 102 a and asecond lower electrode film 102 c is preferably made of amorphousmaterial with an atomic arrangement similar to an amorphous phase of therecording film 104 for the purpose of stabilizing the amorphous phase ofthe recording film 104. The amorphous material having an atomicarrangement similar to that of the amorphous phase of the recording film104 and suitable for the second lower electrode film 102 c is TiSi_(x)Nor TaSi_(x)N_(y), as above-mentioned, for example.

The phase change memory shown in FIG. 9 includes the first lowerelectrode film 102 b and the second lower electrode film 102 cpositioned at a side of the phase change recording film 104 and adjacentto the phase change recording film 104, and the second lower electrodefilm 102 c has an average distance between nearest neighbor atoms moreclosely to an average distance between nearest neighbor atoms of a mainconstituting element in the recording film 104 than an average distancebetween nearest neighbor atoms in the first lower electrode film 102 b.

FIG. 10 schematically illustrates a sectional structure of a main partin a phase change memory of a third embodiment of the present invention.The third embodiment is basically the same structure as that in thefirst embodiment. The difference between the first and third embodimentsis that the insulation film 103 comprises sub-layers 103 a and 103 boverlaid together along a vertical direction.

In this phase change memory, a first insulation film 103 a is preferablymade of material well-adherent to the wiring film 102 a and a secondinsulation film 103 b is preferably made of amorphous material with anatomic arrangement similar to an amorphous phase of the recording film104 for the purpose of stabilizing the amorphous phase of the recordingfilm 104. The amorphous material having an atomic arrangement similar tothat of the amorphous phase of the recording film 104 and suitable forthe second lower electrode film 102 c is TiO_(x)N_(y), TaO_(x)N_(y),TiSi_(x)O_(y)N_(z) or TaSi_(x)O_(y)N_(z) as above-mentioned, forexample.

The phase change memory shown in FIG. 10 includes the first insulationfilm 103 a and the second insulation film 103 b positioned at a side ofthe phase change recording film 104 and adjacent to the phase changerecording film 104, and the second insulation film 103 b has an averagedistance between nearest neighbor atoms more closely to an averagedistance between nearest neighbor atoms of a main constituting elementin the recording film 104 than an average distance between nearestneighbor atoms in the first insulation film 103 a.

FIG. 11 schematically illustrates a sectional structure of a phasechange recording medium of a forth embodiment of the present invention.The phase change recording medium, which is designed for an opticaldisc, is fabricated by successively overlaying a lower dielectric film2, a phase change recording film 3, an upper dielectric film 4, areflection film 5, an overcoat film 6 and a polycarbonate film 7 on apolycarbonate substrate 1.

The phase change recording film 4 contains at least two constitutionalelements selected from the group consisting of Ge, Sb and Te. A mainconstituent of the phase change recording film 4 is GeSb₂Te₄, Ge₂Sb₂Te₅,Ge₆Sb₂Te₉, ZnSb_(x)Te_(y), ZnGe_(x)Te_(y), ZnGe_(x)Sb_(y)Te_(z) orGeSb_(x)Te_(y). The constituent GeSb₂Te₄, Ge₂Sb₂Te₅ or Ge₆Sb₂Te₉ has anadvantage that phase changing speed is high and the constituentZnSb_(x)Te_(y), ZnGe_(x)Te_(y), ZnGe_(x)Sb_(y)Te_(z) or GeSb_(x)Te_(y)has an advantage that mechanical strength is strong.

The lower dielectric film 2 and the upper dielectric film 4 may beformed by sputtering, CVD, plating or else. The lower dielectric film 2is in contact with the recording film 3, and therefore, it is effectivethat the lower dielectric film 2 is made of amorphous material with anaverage distance of 0.3 nm or so between nearest neighbor atoms at acontact interface for the purpose of stabilizing the amorphous phase ofthe phase change recording film 4. The specified distance in the lowerdielectric layer 2 is suitable for stabilizing an amorphous phase of therecording film 3, by the same reason as in the relationship between thelower electrode film 102 and the recording film 104 in FIG. 1, asabove-explained with FIGS. 2 to 4. The amorphous material having anaverage distance of 0.3 nm or so between nearest neighbor atoms at acontact interface and suitable for the lower dielectric layer 2 isTiO_(x)N_(y), TaO_(x)N_(y), TiSi_(x)O_(y)N_(z) or TaSi_(x)O_(y)N_(z) forinstance.

In order to improve rewriting tolerance, tensile strain may be impartedto the recording film 3 by applying a compressive strain to the upperdielectric film 4. Impartment of tensile strain is accomplished bysubjecting the upper dielectric layer 4 to oxidizing, nitriding oroxynitriding when the upper dielectric film 4 is formed.

FIG. 12 schematically illustrates a sectional structure of a mainportion of a phase change memory of a fifth embodiment of the presentinvention. In the present phase change memory, a gate insulation film202 and a gate electrode 206, which structure a transistor, are formedon a silicon substrate 201, for example, and further wiring is formed indiffusion layers 203 and 204 as source and drain.

The phase change memory in FIG. 12 has wiring 208 a in electricallycommunication with the diffusion layer 204, wiring 208 b in electricallycommunication with the diffusion layer 203, and wiring 215, 217, 219. Alower electrode film 210 in electrically communication with the wiring208 b, a phase change recording film 212 deposited on the lowerelectrode film 210, and an upper electrode film 213 deposited on thephase change recording film 212, are isolated by insulation layers 207,209, 211, 214, 216 and 218.

A transistor, which is composed of the gate electrode 206, the gateinsulation film 202 and the substrate 201 in FIG. 12, corresponds to atransistor in a memory circuit shown in FIG. 13, for example. Forinstance, electrodes 221 and 223 at both sides of a phase changerecording film 223 in FIG. 13 are turned on or off by a transistor 220so as to allow access to a certain memory cell at a designated address.

The structure is the same as a structure shown in FIG. 3 ofJP-A-2003-229358, except materialistic combination. The lower electrodefilm 210 is advantageously made of amorphous material with an atomicarrangement similar to an amorphous phase of the phase change recordingfilm 212 in order to stabilize the amorphous phase of the phase changerecording film 212. In the case where the lower electrode film 210 isnarrower than the phase change recording film 212, the insulation layer209 is formed in contact with the phase change recording film 212 andthe lower electrode film 210. In this regard, the insulation layer 209is preferably made of amorphous material with an average distance of 0.3nm or so between nearest neighbor atoms at a contact interface in orderto stabilize an amorphous phase of the phase change recording film 212.

Instead of the circuit structure using transistors shown in FIG. 13, thefifth embodiment can be applied to a circuit structure in which diodes224 to select a certain memory cell are employed as shown in FIG. 14. InFIG. 14, the numerals 225, 227 denote electrodes, and the numeral 226denotes a phase change recording film. The structure shown in FIG. 14 isthe same as a circuit shown in FIG. 1 of JP-A-2001-127263. The sectionalstructure in this case may be basically the same as a structure shown inFIG. 3 or FIG. 7 of JP-A-2001-127263.

Another example of a sectional structure is illustrated in FIG. 15. Inthe structure shown in FIG. 5, wiring 302 is formed on a substrate 301,and semiconductor films 303 and 305 are further formed frompolycrystalline silicone thereon. An insulation film 307, a lowerelectrode film 308, an insulation film 309, a phase change recordingfilm 310, an upper electrode film 311, an insulation film 312 and wiring313 are successively overlaid on the semiconductor layers 303 and 305. Adiode to select a certain memory cell is prepared by ion implantation ofthe semiconductor layer 303 with an N type dopant to form a n+domain 304and ion implantation of the semiconductor film 305 with a p type dopantto form a p+domain 306.

Also in this phase change memory, the lower electrode film 308 is madeof amorphous material with an atomic arrangement similar to an amorphousphase of the phase change recording film 310 in order to stabilize theamorphous phase of the recording film 310. In the case where the lowerelectrode film 308 is narrower than the recording film 310, theinsulation film 307 is in contact with the recording film 310 and thelower electrode film 308. In this regard, the insulation film 307 isadvantageously made of amorphous material with an average distance of0.3 nm or so between nearest neighbor atoms at a contact interface inorder to stabilize the amorphous phase of the recording film 310.

For example, JP-A-2001-229690 discloses a semiconductor device, whichhas a function to retain a rescue addressing signal and a trimmingsignal in such a nonvolatile memory as a flash memory. When asemiconductor device is structured by using the phase change memorydescribed in the preceding embodiments as nonvolatile memory, asemiconductor device with the above-described effects and highreliability is obtained. An example of a circuit diagram of suchsemiconductor device is shown in FIG. 16. This example shows an exampleof a SRAM memory equipped with a defect rescue circuit. In FIG. 16, thenumeral 403 is a chip, the numeral 401 is a phase change memory as aprogramming element, the numeral 402 is a rescue decoder, the numeral405 is an I/O portion, and the numeral 405 is a core, which has a CPU407 and an array 406 of SRAM cells. The phase change memory 401 ispreferably provided at a center of the I/O portion 404 for reduction ofa surface area.

It should be further understood by those skilled in the art thatalthough the foregoing description has been made on embodiments of theinvention, the invention is not limited thereto and various changes andmodifications may be made without departing from the spirit of theinvention and the scope of the appended claims.

1. A phase change memory comprising: a substrate; an insulation filmformed on a main surface of the substrate; a first electrode depositedon the insulation film; a phase change recording film deposited on thefirst electrode; and a second electrode deposited on the phase changerecording film, wherein the phase change recording film contains atleast two of Ge, Sb and Te as main constituting elements thereof, andthe first electrode comprises material of group of Ti, Si and N, orgroup of Ta, Si and N as main constituting material thereof.
 2. A phasechange memory according to claim 1, wherein concentration of Si in thefirst electrode film is between 0.07-33 at. %.
 3. A phase change memoryaccording to claim 1, wherein the first electrode film comprisesTiSi_(x)N_(y) or TaSi_(x)N_(y) formed by chemical vapor deposition orplating.
 4. A phase change memory according to claim 1, wherein thesecond electrode is a film formed by at least one of oxidizing,nitriding and oxynitriding.
 5. A phase change memory according to claim1, wherein the phase change recording film contains Zn as a constitutingelement.
 6. A phase change memory according to claim 1, whereindifference in an average distance between nearest neighbor atoms betweenthe phase change recording film and the first electrode is within 3% ofthe average distance between nearest neighbor atoms of the phase changerecording film.
 7. A phase change memory according to claim 1, whereinthe first electrode comprises a first electrode layer and a secondelectrode layer located between the first electrode layer and the phasechange recording film, and the second electrode layer has an averagedistance between nearest neighbor atoms more closer to an averagedistance between nearest neighbor atoms of main constituting material ofthe phase change recording film than an average distance between nearestneighbor atoms of the first electrode layer.
 8. A phase change memorycomprising: a substrate; a first layer, in which an insulation layer anda first electrode communicated with a first wiring are formed, formed ona main surface side of the substrate; a second layer in which a phasechange recording film is deposited on the insulation layer and the firstelectrode film; and a third layer, in which a second electrodecommunicated with a second wiring is formed, deposited on the phasechange recording film, wherein the phase change recording film containsat least two of Ge, Sb and Te as constituting elements thereof, and thefirst electrode contains group of Ti, Si and N or group of Ta, Si and Nas a main constituting material thereof, and the insulation filmcontains TiO_(x)N_(y), TaO_(x)N_(y), TiSi_(x)O_(y)N_(z) orTaSi_(x)O_(y)N_(z) as a main constituting material thereof.
 9. A phasechange memory according to claim 8, wherein the insulation filmcomprises a first insulation layer and a second insulation layer locatedbetween the first insulation layer and the phase change recording film,and the insulation layer has an average distance between nearestneighbor atoms more closer to an average distance between nearestneighbor atoms of main constituting material of the phase changerecording film than an average distance between nearest neighbor atomsof the first insulation layer.
 10. A phase change memory comprising: asubstrate; an insulation film formed on a main surface of the substrate;a first electrode deposited on the insulation film; a phase changerecording film deposited on the first electrode; and a second electrodedeposited on the phase change recording film, wherein the phase changerecording film contains at least two constituting elements selected fromGe, Sb and Te, and the phase change recording film is in tesile strainstate.
 11. A phase change recording medium comprising: a substrate; afirst dielectric film formed on a main surface of the substrate; arecording film deposited on the first dielectric film; and a seconddielectric film deposited on the recording film, wherein the recordingfilm contains at least one of GeSb₂Te₄, Ge₂Sb₂Te₅ and Ge₆Sb₂Te₉ as mainconstituting material thereof, and the first dielectric film containsTiO_(x)N_(y), TaO_(x)N_(y), TiSi_(x)O_(y)N_(z), TaSi_(x)O_(y)N_(z),TiSi_(x)NO_(y)N_(z) or TaSi_(x)O_(y)N_(z) as main constituting materialthereof.